Threshold voltage extraction for MOS devices is translated into the easier task of locating a minimum in a derived function of IDS and VGS. The technique, which provided excellent results on both simulated (SPICE) and experimental data, has been tested on several MOSFETs from different processes and has been implemented into an automated tool instead of more costly optimisation based techniques.
New experimental technique for fast and accurate MOSFET threshold extraction / Corsi, F.; Marzocca, C.; Portacci, G. V.. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 29:15(1993), pp. 1358-1360. [10.1049/el:19930910]
New experimental technique for fast and accurate MOSFET threshold extraction
F. Corsi;C. Marzocca;
1993-01-01
Abstract
Threshold voltage extraction for MOS devices is translated into the easier task of locating a minimum in a derived function of IDS and VGS. The technique, which provided excellent results on both simulated (SPICE) and experimental data, has been tested on several MOSFETs from different processes and has been implemented into an automated tool instead of more costly optimisation based techniques.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
