An electrothermal model of GaAs FET devices is proposed for an easy, fast and reliable layout design using a personal computer. The contributions to the temperature increase and total thermal resistance of the attachment layer, mounting, metallisations and coating layers, and convection effect are taken into account. The feedback between FET current and channel temperature has also boon considered. The simulation can evaluate the thermal field, current distribution, thermal resistance. and the minimum distance between two contiguous devices to minimise the mutual thermal coupling. A comparison has been carried out with the finite-difference technique and experimental results for a wide range of dissipated power in a MESFET device, and good agreement has been observed.
Electrothermal model of GaAs FET devices for fast PC implementation / Pesare, M.; Giorgio, A.; Perri, A. G.. - In: IEE PROCEEDINGS. CIRCUITS, DEVICES AND SYSTEMS. - ISSN 1350-2409. - STAMPA. - 148:1(2001), pp. 40-44. [10.1049/ip-cds:20010173]
Electrothermal model of GaAs FET devices for fast PC implementation
Giorgio, A.;Perri, A. G.
2001-01-01
Abstract
An electrothermal model of GaAs FET devices is proposed for an easy, fast and reliable layout design using a personal computer. The contributions to the temperature increase and total thermal resistance of the attachment layer, mounting, metallisations and coating layers, and convection effect are taken into account. The feedback between FET current and channel temperature has also boon considered. The simulation can evaluate the thermal field, current distribution, thermal resistance. and the minimum distance between two contiguous devices to minimise the mutual thermal coupling. A comparison has been carried out with the finite-difference technique and experimental results for a wide range of dissipated power in a MESFET device, and good agreement has been observed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
