The density of states in the mobility gap of amorphous silicon films has been determined by means of field-effect measurements. The samples were deposited by laser-induced chemical-vapor deposition. The analytical determination of the density-of-states distribution is based on the analytical solution of the Fredholm equation of the first kind relating the induced space-charge density and the density of states.

Analytical determination of the density-of-gap-states distribution in amorphous semiconductors: Experimental results / Augelli, V.; Berardi, V.; Murri, R.; Schiavulli, L.; Leo, M.; Leo, R. A.; Soliani, G.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 35:2(1987), pp. 614-618. [10.1103/PhysRevB.35.614]

Analytical determination of the density-of-gap-states distribution in amorphous semiconductors: Experimental results

V. Berardi;
1987-01-01

Abstract

The density of states in the mobility gap of amorphous silicon films has been determined by means of field-effect measurements. The samples were deposited by laser-induced chemical-vapor deposition. The analytical determination of the density-of-states distribution is based on the analytical solution of the Fredholm equation of the first kind relating the induced space-charge density and the density of states.
1987
Analytical determination of the density-of-gap-states distribution in amorphous semiconductors: Experimental results / Augelli, V.; Berardi, V.; Murri, R.; Schiavulli, L.; Leo, M.; Leo, R. A.; Soliani, G.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 35:2(1987), pp. 614-618. [10.1103/PhysRevB.35.614]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/11506
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