The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect of different tunnel injection schemes on the hot-electron energy distributions is compared. High-power superlattice lasers with improved high-energy injection schemes are described. The local temperature distribution, the thermal resistance and the hot-phonon effects are monitored in operating devices by micro-probe Raman and luminescence measurements.
State of the art of InP and GaAs quantum cascade lasers / Scamarcio, G.; Spagnolo, V.; Troccoli, M.; Zanolli, Z.; Rizzi, F.; Vitiello, M.; Marano, D.; Sabato, A.; Catalano, I. M.; Sibilano, M.; Calabrese, P.. - STAMPA. - (2002), pp. 731-734. (Intervento presentato al convegno 14th Indium Phosphide and Related Materials Conference tenutosi a Stockholm, Sweden nel May 12-16, 2002) [10.1109/ICIPRM.2002.1014626].
State of the art of InP and GaAs quantum cascade lasers
V. Spagnolo;
2002-01-01
Abstract
The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect of different tunnel injection schemes on the hot-electron energy distributions is compared. High-power superlattice lasers with improved high-energy injection schemes are described. The local temperature distribution, the thermal resistance and the hot-phonon effects are monitored in operating devices by micro-probe Raman and luminescence measurements.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
