In this paper a new thermal DC I-V empirical model of GaAs MESFETs is proposed. The model is rather simple, suitable for implementation in software for circuit simulations and allows to simulate very well both the internal thermal effects, due to heating of device, for dissipation of electrical power, and the external thermal effects, due to particular environmental temperatures. Moreover it is valid for different MESFET types. The agreement between simulated and measured curves obtained for MESFETs with different gate lengths is excellent, so that accuracy and usefulness of the proposed model are confirmed.
Modeling thermal effects on MESFET I-V characteristics / Castagnolo, B.; Giorgio, A.; Perri, A. G.. - STAMPA. - (1996), pp. 1298-1301. (Intervento presentato al convegno 8th Mediterranean Electrotechnical Conference on Industrial Applications in Power Systems, Computer Science and Telecommunications, MELECON '96 tenutosi a Bari, Italy nel May 13-16, 1996) [10.1109/MELCON.1996.551184].
Modeling thermal effects on MESFET I-V characteristics
B. Castagnolo;A. Giorgio;A. G. Perri
1996-01-01
Abstract
In this paper a new thermal DC I-V empirical model of GaAs MESFETs is proposed. The model is rather simple, suitable for implementation in software for circuit simulations and allows to simulate very well both the internal thermal effects, due to heating of device, for dissipation of electrical power, and the external thermal effects, due to particular environmental temperatures. Moreover it is valid for different MESFET types. The agreement between simulated and measured curves obtained for MESFETs with different gate lengths is excellent, so that accuracy and usefulness of the proposed model are confirmed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
