In this paper a 2-D I-V MESFET model coupled with a 3-D thermal model is presented. The thermal dependence of the velocity-electric field expression proposed by Chang et al. (1986), has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all the physical parameters involved both in the electric thermal model has been taken into account.
A method to determine the thermal dependence of large and small signal equivalent circuit parameters of GaAs FETs / M., Pesare; Giorgio, Agostino; Perri, Anna Gina. - (2001), pp. 197-200. (Intervento presentato al convegno 8th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2001. tenutosi a Malta nel 2-5 settembre 2001) [10.1109/ICECS.2001.957714].
A method to determine the thermal dependence of large and small signal equivalent circuit parameters of GaAs FETs
GIORGIO, Agostino;PERRI, Anna Gina
2001-01-01
Abstract
In this paper a 2-D I-V MESFET model coupled with a 3-D thermal model is presented. The thermal dependence of the velocity-electric field expression proposed by Chang et al. (1986), has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all the physical parameters involved both in the electric thermal model has been taken into account.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
