A temperature dependent DC model of GaAs MESFETs is proposed. Modelling the dependence on temperature of the device threshold voltage and of the maximum saturation drain-source current allows to characterize GaAs MESFETs having long and short gate length with results, compared with the Rodriguez-Tellez model, showing improvements of accuracy up to 60%.

Modelling the dependence on temperature of the GaAs MESFET parameters / Giorgio, Agostino; Perri, Anna Gina. - (2003). (Intervento presentato al convegno ECCTD'03 European Conference on Circuit Theory and Design tenutosi a Cracovia, Polonia nel 1-4 settembre 2003).

Modelling the dependence on temperature of the GaAs MESFET parameters

GIORGIO, Agostino;PERRI, Anna Gina
2003-01-01

Abstract

A temperature dependent DC model of GaAs MESFETs is proposed. Modelling the dependence on temperature of the device threshold voltage and of the maximum saturation drain-source current allows to characterize GaAs MESFETs having long and short gate length with results, compared with the Rodriguez-Tellez model, showing improvements of accuracy up to 60%.
2003
ECCTD'03 European Conference on Circuit Theory and Design
Modelling the dependence on temperature of the GaAs MESFET parameters / Giorgio, Agostino; Perri, Anna Gina. - (2003). (Intervento presentato al convegno ECCTD'03 European Conference on Circuit Theory and Design tenutosi a Cracovia, Polonia nel 1-4 settembre 2003).
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/17395
Citazioni
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact