We have investigated the transport properties of In0.53Ga0.47As/AlAs0.56Sb0.44 quantum cascade lasers operating at lambda similar to 4.3 mu m, by means of band-to-band photoluminescence (PL). The evolution of the PL bands with the applied electric field allows a detailed analysis of the injection and emission efficiency. A clear correlation between the device thermal performance and the electron distribution has been found.

Electron Transport in Novel Sb-based Quantum Cascade Lasers / Spagnolo, V.; Vitiello, M. S.; Scamarcio, G.; Revin, D. G.; Cockburn, J. W.. - STAMPA. - 110:(2006), pp. 295-300. (Intervento presentato al convegno 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors tenutosi a Chicago, IL nel July 25-29, 2005) [10.1007/978-3-540-36588-4_67].

Electron Transport in Novel Sb-based Quantum Cascade Lasers

V. Spagnolo;
2006-01-01

Abstract

We have investigated the transport properties of In0.53Ga0.47As/AlAs0.56Sb0.44 quantum cascade lasers operating at lambda similar to 4.3 mu m, by means of band-to-band photoluminescence (PL). The evolution of the PL bands with the applied electric field allows a detailed analysis of the injection and emission efficiency. A clear correlation between the device thermal performance and the electron distribution has been found.
2006
14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors
978-3-540-36587-7
Electron Transport in Novel Sb-based Quantum Cascade Lasers / Spagnolo, V.; Vitiello, M. S.; Scamarcio, G.; Revin, D. G.; Cockburn, J. W.. - STAMPA. - 110:(2006), pp. 295-300. (Intervento presentato al convegno 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors tenutosi a Chicago, IL nel July 25-29, 2005) [10.1007/978-3-540-36588-4_67].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/23684
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