We compared the thermal performance of mid-IR GaInAsAlInAs quantum cascade lasers (QCLs) having identical gain medium, but different heat sinking configurations. By using a two-dimensional anisotropic thermal model, we have calculated the temperature profiles and the heat flow patterns of ridge waveguide QCLs, either buried or planarized, and mounted substrate-side or epilayer-side down. Device planarization with Y2 O3: Si3 N4 dielectric layers gives an ∼7% reduction of the device thermal resistance with respect to InP buried heterostructures. If this planarization is combined with thick gold electroplating and epilayer-side mounting of the device, the thermal resistance is reduced by ∼34% and ∼50%, respectively, with respect to conventional ridge waveguide structures

Improved thermal management of mid-IR quantum cascade lasers / Spagnolo, Vincenzo Luigi; Lops, A.; Scamarcio, G.; Vitiello, M. S.; Di Franco, C.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 103:4(2008). [10.1063/1.2840136]

Improved thermal management of mid-IR quantum cascade lasers

SPAGNOLO, Vincenzo Luigi;
2008-01-01

Abstract

We compared the thermal performance of mid-IR GaInAsAlInAs quantum cascade lasers (QCLs) having identical gain medium, but different heat sinking configurations. By using a two-dimensional anisotropic thermal model, we have calculated the temperature profiles and the heat flow patterns of ridge waveguide QCLs, either buried or planarized, and mounted substrate-side or epilayer-side down. Device planarization with Y2 O3: Si3 N4 dielectric layers gives an ∼7% reduction of the device thermal resistance with respect to InP buried heterostructures. If this planarization is combined with thick gold electroplating and epilayer-side mounting of the device, the thermal resistance is reduced by ∼34% and ∼50%, respectively, with respect to conventional ridge waveguide structures
2008
Improved thermal management of mid-IR quantum cascade lasers / Spagnolo, Vincenzo Luigi; Lops, A.; Scamarcio, G.; Vitiello, M. S.; Di Franco, C.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 103:4(2008). [10.1063/1.2840136]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/2411
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