Si-GaAs(001) superlattices have been grown by molecular beam epitaxy. X-ray interference measurements and Raman spectroscopy studies in the acoustic range for (Si)2(GaAs)28 and (Si)3(GaAs)50 superlattice structures demonstrate that pseudomorphic growth conditions were achieved. Raman data in the optical range show large (approximately 50-70 cm-1) confinement- and strain-induced shifts of the Si-like optical modes.

Si-GaAs(001) Superlattices / Sorba, L.; Bratina, G.; Franciosi, A.; Tapfer, L.; Scamarcio, G.; Spagnolo, V.; Molinari, E.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 61:13(1992), pp. 1570-1572. [10.1063/1.107499]

Si-GaAs(001) Superlattices

Spagnolo, V.;
1992-01-01

Abstract

Si-GaAs(001) superlattices have been grown by molecular beam epitaxy. X-ray interference measurements and Raman spectroscopy studies in the acoustic range for (Si)2(GaAs)28 and (Si)3(GaAs)50 superlattice structures demonstrate that pseudomorphic growth conditions were achieved. Raman data in the optical range show large (approximately 50-70 cm-1) confinement- and strain-induced shifts of the Si-like optical modes.
1992
Si-GaAs(001) Superlattices / Sorba, L.; Bratina, G.; Franciosi, A.; Tapfer, L.; Scamarcio, G.; Spagnolo, V.; Molinari, E.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 61:13(1992), pp. 1570-1572. [10.1063/1.107499]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/2626
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