The results of a novel analysis of active twin-ridge-waveguide coupler switches in InGaAsP/InP are reported. A travelling-wave model is adopted and the switching performance of both the cross and the bar state is investigated by means of the beam propagation method (BPM) based on the method of lines. Our results have been validated through the BPM based on the fast Fourier transformed and on the finite-difference scheme. A port-independent cross and bar state with high gain and low cross-talk have been demonstrated by choosing a foul-electrode configuration. As art example, for a device length L = 1100 mu m and a bar-state configuration we have found a cross-talk CT = -17.1 dB(CT = -7.6 dB) and gain G = 9.4 dB (G = 9.5 dB) for the electromagnetic field launched in the waveguide with an electrode with lower (higher) injected curret.
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|Titolo:||Design of Active Switches Using InGaAsP/InP Heterostructure.|
|Data di pubblicazione:||1997|
|Appare nelle tipologie:||1.1 Articolo in rivista|