Perpendicular MgO-based magnetic tunnel junctions are optimal candidates as building blocks of spin-transfer torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below 106 A/cm(2). A recent work has experimentally demonstrated the possibility of performing magnetization switching assisted by an electric-field at ultralow current density. Theoretically, this switching has been studied using a macrospin approach only. Here, we show a full micromagnetic study. We found that the switching occurs via a complex nucleation process including the nucleation of magnetic vortexes.
Micromagnetic study of electrical-field-assisted magnetization switching in MTJ devices / Carpentieri, Mario; Tomasello, R; Ricci, M; Burrascano, P; Finocchio, G.. - In: IEEE TRANSACTIONS ON MAGNETICS. - ISSN 0018-9464. - 50:11(2014). (Intervento presentato al convegno Intermag 2014 tenutosi a Dresden, GERMANY nel May 4-8, 2014) [10.1109/TMAG.2014.2327192].
Micromagnetic study of electrical-field-assisted magnetization switching in MTJ devices
CARPENTIERI, Mario;Tomasello R;
2014-01-01
Abstract
Perpendicular MgO-based magnetic tunnel junctions are optimal candidates as building blocks of spin-transfer torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below 106 A/cm(2). A recent work has experimentally demonstrated the possibility of performing magnetization switching assisted by an electric-field at ultralow current density. Theoretically, this switching has been studied using a macrospin approach only. Here, we show a full micromagnetic study. We found that the switching occurs via a complex nucleation process including the nucleation of magnetic vortexes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
