In this paper we present a simple model of Carbon Nanotube Field Effect Transistors (CNTFETs), whose main objective is to obtain a very good agreement between measured and simulated I-V curves through a best-fitting procedure, particularly in the knee and saturation regions. To verify the accuracy of the model, the results have been compared with those of experimental data and of a numerical model online available.
A Simple I-V Model of Carbon Nanotube Field Effect Transistors / R., Marani; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF ADVANCES IN ENGINEERING AND TECHNOLOGY. - ISSN 2231-1963. - 6:3(2013), pp. 1076-1082.
A Simple I-V Model of Carbon Nanotube Field Effect Transistors
PERRI, Anna Gina
2013-01-01
Abstract
In this paper we present a simple model of Carbon Nanotube Field Effect Transistors (CNTFETs), whose main objective is to obtain a very good agreement between measured and simulated I-V curves through a best-fitting procedure, particularly in the knee and saturation regions. To verify the accuracy of the model, the results have been compared with those of experimental data and of a numerical model online available.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
