A new class of magnetic tunnel junctions (MTJ) with perpendicular anisotropy has been recently used for fast switching applications. A theoretical investigation for these materials to be applied as microwave nano-oscillators is here reported. We demonstrate micro-magnetically the possibility to have both high frequency and high power microwave emission at zero field in a double magnetic tunnel junction. Our predictions give rise to the design of a more compact and easily embedded spin-torque oscillators for all-on-chip applications. To increase the oscillator power, we also demonstrate the possibility to obtain frequency locking at zero field by applying a low current at microwaves.
Spin-torque oscillators using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions / Carpentieri, Mario; Lattarulo, F.. - In: IEEE TRANSACTIONS ON MAGNETICS. - ISSN 0018-9464. - 49:7(2013), pp. 3151-3154. (Intervento presentato al convegno 12th Joint MMM/Intermag Conference tenutosi a Chicago, Illinois - USA nel January 14-18, 2013) [10.1109/TMAG.2013.2244866].
Spin-torque oscillators using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
CARPENTIERI, Mario;
2013-01-01
Abstract
A new class of magnetic tunnel junctions (MTJ) with perpendicular anisotropy has been recently used for fast switching applications. A theoretical investigation for these materials to be applied as microwave nano-oscillators is here reported. We demonstrate micro-magnetically the possibility to have both high frequency and high power microwave emission at zero field in a double magnetic tunnel junction. Our predictions give rise to the design of a more compact and easily embedded spin-torque oscillators for all-on-chip applications. To increase the oscillator power, we also demonstrate the possibility to obtain frequency locking at zero field by applying a low current at microwaves.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.