In this paper a 2-D I-V MESFET model coupled with a 3D thermal model is presented. The temperature dependence of the velocity-electric field expression proposed by Chang et al. has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all physical parameters involved both in the electric model and in the thermal model has been taken into account.

Analytical investigation of the temperature dependence of GaAs FET equivalent circuit parameters / Pesare, M.; Giorgio, A.; Perri, A. G.. - In: ALTA FREQUENZA - RIVISTA DI ELETTRONICA. - ISSN 1120-1908. - STAMPA. - 13:3(2001), pp. 35-39.

Analytical investigation of the temperature dependence of GaAs FET equivalent circuit parameters

Giorgio, A.;Perri, A. G.
2001-01-01

Abstract

In this paper a 2-D I-V MESFET model coupled with a 3D thermal model is presented. The temperature dependence of the velocity-electric field expression proposed by Chang et al. has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all physical parameters involved both in the electric model and in the thermal model has been taken into account.
2001
Analytical investigation of the temperature dependence of GaAs FET equivalent circuit parameters / Pesare, M.; Giorgio, A.; Perri, A. G.. - In: ALTA FREQUENZA - RIVISTA DI ELETTRONICA. - ISSN 1120-1908. - STAMPA. - 13:3(2001), pp. 35-39.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/4449
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