The aim of this paper is to model and characterize the current voltage characteristics of Schottky Barrier (SB) Carbon NanoTube Field Effect Transistors (SB-CNTFETs) below and above threshold, in order to evaluate the noise margin and output voltage swing, whose values are necessary in the design of digital circuits
Modelling and Implementation of Subthreshold Currents In Schottky Barrier Cntfets For Digital Applications / Marani, R.; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF RESEARCH AND REVIEWS IN APPLIED SCIENCES. - ISSN 2076-734X. - 11:3(2012), pp. 368-376.
Modelling and Implementation of Subthreshold Currents In Schottky Barrier Cntfets For Digital Applications
PERRI, Anna Gina
2012-01-01
Abstract
The aim of this paper is to model and characterize the current voltage characteristics of Schottky Barrier (SB) Carbon NanoTube Field Effect Transistors (SB-CNTFETs) below and above threshold, in order to evaluate the noise margin and output voltage swing, whose values are necessary in the design of digital circuitsFile in questo prodotto:
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