We propose the simulation and the fabrication of a photonic crystal (PhC) strain-sensitive structure, showing that the optical properties of photonic crystals can be used to realize sensing devices characterized by a high degree of compactness and good resolution. The force/pressure optical sensor has been realized by designing a bulk GaAs/AlGaAs photonic crystal microcavity operating in the wavelength range 1300–1400 nm. The simulations show that the resonant wavelength of the mode localized in the microcavity shifts its spectral position following a linear behaviour when a pressure ranging between 0.25 Gpa and 5 GPa is applied, thus allowing the possibility to achieve pressure resolution of 5.82 nm/GPa. High-resolution electron beam lithography technique followed by inductively coupled plasma process were used to transfer the designed geometry on the sample.

Fabrication of force sensors based on two-dimensional photonic crystal technology / Stomeo, T.; Grande, Marco; Qualtieri, A.; Passaseo, A.; Salhi, A.; De Vittorio, M.; Biallo, D.; D'Orazio, Antonella; De Sario, M.; Marrocco, V.; Petruzzelli, Vincenzo; Prudenzano, Francesco. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 84:5-8(2007), pp. 1450-1453. [10.1016/j.mee.2007.01.227]

Fabrication of force sensors based on two-dimensional photonic crystal technology

GRANDE, Marco;D'ORAZIO, Antonella;PETRUZZELLI, Vincenzo;PRUDENZANO, Francesco
2007-01-01

Abstract

We propose the simulation and the fabrication of a photonic crystal (PhC) strain-sensitive structure, showing that the optical properties of photonic crystals can be used to realize sensing devices characterized by a high degree of compactness and good resolution. The force/pressure optical sensor has been realized by designing a bulk GaAs/AlGaAs photonic crystal microcavity operating in the wavelength range 1300–1400 nm. The simulations show that the resonant wavelength of the mode localized in the microcavity shifts its spectral position following a linear behaviour when a pressure ranging between 0.25 Gpa and 5 GPa is applied, thus allowing the possibility to achieve pressure resolution of 5.82 nm/GPa. High-resolution electron beam lithography technique followed by inductively coupled plasma process were used to transfer the designed geometry on the sample.
2007
Fabrication of force sensors based on two-dimensional photonic crystal technology / Stomeo, T.; Grande, Marco; Qualtieri, A.; Passaseo, A.; Salhi, A.; De Vittorio, M.; Biallo, D.; D'Orazio, Antonella; De Sario, M.; Marrocco, V.; Petruzzelli, Vincenzo; Prudenzano, Francesco. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 84:5-8(2007), pp. 1450-1453. [10.1016/j.mee.2007.01.227]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/527
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