In this paper a 2-D Fourier transform-based analytical method for the thermal and electrical solution of multilayer structure electronic devices is proposed. Compared with previous models presented in literature, it is general and can easily be applied to a large variety of integrated devices, provided that their structure can be represented as an arbitrary set of superimposed layers with a 2-D embedded thermal source. The proposed method is independent of the specific physical properties of the layers, so GaAs MESFETs and HEMTs as well as Silicon and Silicon-On-Insulator MOSFETs and heterostructure LASERs can be analyzed. Moreover, it takes into account the dependence of the thermal conductivity of all the layers on the temperature; the heat equation is coupled with the device current-voltage relation in order to give physical consistence to the experimental evidence that the temperature increase causes a degradation of the electrical performances and that the electrical power is not uniformly distributed

In questo articolo viene pro- posto un metodo analitico basato sulla trasfor- mata di Fourier bidimensionale per la valuta- zione del campo termico in dispositivi elettro- nici multistrato. Il confronto con altri metodi presenti in lette- ratura consente di affermare che il metodo proposto è più semplice, può essere applicato ad una grande varietà di dispositivi integrati, la cui struttura è rappresentabile da un nume- ro arbitrario di strati sovrapposti. Il metodo proposto è indipendente dalle spe- cifiche proprietà fisiche degli strati, cosicchè possono essere analizzati dispositivi quali MESFET, HEMT, MOSFET, LASER a semiconduttore. Inoltre viene considerata la dipendenza della conduttività termica dalla temperatura e l'equazione del flusso termico è accoppiata con il modello I-V del dispositivo, in modo da caratterizzare la dipendenza termica della cor- rente.

A 2-D Fourier transform-based method for the temperature distribution of multilayer structure electronic devices / Giorgio, Agostino; Perri, Anna Gina. - In: LA COMUNICAZIONE. - ISSN 1590-864X. - STAMPA. - 50:(2001), pp. 21-34.

A 2-D Fourier transform-based method for the temperature distribution of multilayer structure electronic devices

Agostino Giorgio;Anna Gina Perri
2001-01-01

Abstract

In this paper a 2-D Fourier transform-based analytical method for the thermal and electrical solution of multilayer structure electronic devices is proposed. Compared with previous models presented in literature, it is general and can easily be applied to a large variety of integrated devices, provided that their structure can be represented as an arbitrary set of superimposed layers with a 2-D embedded thermal source. The proposed method is independent of the specific physical properties of the layers, so GaAs MESFETs and HEMTs as well as Silicon and Silicon-On-Insulator MOSFETs and heterostructure LASERs can be analyzed. Moreover, it takes into account the dependence of the thermal conductivity of all the layers on the temperature; the heat equation is coupled with the device current-voltage relation in order to give physical consistence to the experimental evidence that the temperature increase causes a degradation of the electrical performances and that the electrical power is not uniformly distributed
2001
A 2-D Fourier transform-based method for the temperature distribution of multilayer structure electronic devices / Giorgio, Agostino; Perri, Anna Gina. - In: LA COMUNICAZIONE. - ISSN 1590-864X. - STAMPA. - 50:(2001), pp. 21-34.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/5549
Citazioni
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact