The aim of this paper is to present a procedure to determine the intrinsic model of Carbon NanoTube Field Effect Transistors (CNTFETs) for RF applications. In particular an active model, deduced from S parameters measurements, already proposed by us, is examined. Moreover, through a de-embedding procedure, which allows to remove random errors in measured S parameters of small-signal device, we evaluate the intrinsic model of CNTFETs to implement directly in simulation software.
A Procedure to Determine the Intrinsic Model of CNTFETs for RF Applications / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF RESEARCH AND REVIEWS IN APPLIED SCIENCES. - ISSN 2076-734X. - STAMPA. - 24:2(2015), pp. 52-58.
A Procedure to Determine the Intrinsic Model of CNTFETs for RF Applications
Marani, Roberto;Perri, Anna Gina
2015-01-01
Abstract
The aim of this paper is to present a procedure to determine the intrinsic model of Carbon NanoTube Field Effect Transistors (CNTFETs) for RF applications. In particular an active model, deduced from S parameters measurements, already proposed by us, is examined. Moreover, through a de-embedding procedure, which allows to remove random errors in measured S parameters of small-signal device, we evaluate the intrinsic model of CNTFETs to implement directly in simulation software.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
