Temperature dependent photoreflectance, photoluminescence, and Raman spectroscopy have been used to study the optical properties of MBE-grown InGaAlAs layers lattice matched to InP. A detailed study of the photoreflectance and photoluminescence spectra at low temperatures gives an exciton binding energy of the order of 2 meV. At higher temperatures, a combination of temperature dependent photoluminescence and Raman measurements indicates that InAs-like LO phonons play a dominant role in the electron-phonon interaction of these crystals.

Excitons and electron-phonon interaction in In0.52Ga0.18Al0.30As layers / Cingolani, R.; Lomascolo, M.; Rinaldi, R.; Spagnolo, V.; Scamarcio, G.; Ferrara, M.; Hase, A.; Künzel, H.. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 84:6(1992), pp. 679-683. [10.1016/0038-1098(92)90214-T]

Excitons and electron-phonon interaction in In0.52Ga0.18Al0.30As layers

Spagnolo, V.;
1992-01-01

Abstract

Temperature dependent photoreflectance, photoluminescence, and Raman spectroscopy have been used to study the optical properties of MBE-grown InGaAlAs layers lattice matched to InP. A detailed study of the photoreflectance and photoluminescence spectra at low temperatures gives an exciton binding energy of the order of 2 meV. At higher temperatures, a combination of temperature dependent photoluminescence and Raman measurements indicates that InAs-like LO phonons play a dominant role in the electron-phonon interaction of these crystals.
1992
Excitons and electron-phonon interaction in In0.52Ga0.18Al0.30As layers / Cingolani, R.; Lomascolo, M.; Rinaldi, R.; Spagnolo, V.; Scamarcio, G.; Ferrara, M.; Hase, A.; Künzel, H.. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 84:6(1992), pp. 679-683. [10.1016/0038-1098(92)90214-T]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/565
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