In this letter it is proposed a fully empirical current-voltage (I-V) model of the Carbon Nanotube Field Effect Transistor (CNTFET) based on an empirical approach to overcome the drawbacks of the currently used models. The empirical approach in past has been successfully applied by the author to the characterization of GaAs MESFETs but has never been applied until now to the characterization of the CNTFET. The proposed model is very compact, fast and accurate, without any physical approximation, and then it is particularly suitable for the design of CNTFETs-based electronic circuits.
A new empirical I-V model of CNTFETs for the design of electronic circuits / Giorgio, Agostino. - In: INTERNATIONAL JOURNAL OF ENGINEERING AND INNOVATIVE TECHNOLOGY. - ISSN 2277-3754. - 4:5(2014), pp. 165-168.
A new empirical I-V model of CNTFETs for the design of electronic circuits
GIORGIO, Agostino
2014-01-01
Abstract
In this letter it is proposed a fully empirical current-voltage (I-V) model of the Carbon Nanotube Field Effect Transistor (CNTFET) based on an empirical approach to overcome the drawbacks of the currently used models. The empirical approach in past has been successfully applied by the author to the characterization of GaAs MESFETs but has never been applied until now to the characterization of the CNTFET. The proposed model is very compact, fast and accurate, without any physical approximation, and then it is particularly suitable for the design of CNTFETs-based electronic circuits.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
