Noise-like sequences to resonant excite the writing of a universal memory based on spin-transfer-torque MRAM

The effects of a noise-like weak signal in the resonant switching of the magnetization driven by spin transfer torque have been systematically studied by means of micromagnetic simulations in both in-plane spin valves and out-of-plane magnetic tunnel junctions. The use of a noise-like resonant excitation allows the overpassing of some critical points compared to the traditional microwave assisted switching. In particular, the application of binary spreading sequences (BSS) does not require the precise knowledge of the resonant frequency and of the optimum relative phase, allowing the use of the same resonant excitation for all the devices in a matrix of memory cells, even if small variations of the physical and geometrical parameters are present. In addition, we also found that in spin valves the switching probabilities close to 100% can be achieved with a smaller current pulse, and in magnetic tunnel junctions a significant energy saving can be obtained.