The aim of this work is the development of radiation hard detectors for very high luminosity colliders. A growing interest has been recently focused on Czochralski silicon as a potentially radiation-hard material. We report on the processing and characterization of micro-strip sensors and pad detectors produced by ITC-IRST on n- and p-type magnetic Czochralski and float zone silicon. Part of the samples has been irradiated using 24 GeV/c protons (CERN-Geneva), while another part has been irradiated with 26 MeV protons (FZK-Karisruhe) up to a fluence of 5 x 10(15) 1 MeV-neutron-equivalent/cmz. All the samples have been completely characterized before and after irradiation. Their radiation hardness as a function of the irradiation fluence has been established in terms of breakdown voltage, leakage current and evaluating the more relevant mini-sensor parameter variation. Moreover, the time evolution of depletion voltage, leakage current and inter-strip capacitance has been monitored in order to study their annealing behavior and space charge sign inversion effects. (c) 2006 Elsevier B.V. All rights reserved.

Study of radiation damage induced by 24 GeV/c and 26 MeV protons on heavily irradiated MCz and FZ silicon detectors / Radicci, V.; Borrello, L.; Boscardin, M.; Bruzzi, M.; Creanza, Donato Maria; Dalla Betta, G. F.; de Palma, M.; Focardi, E.; Macchiolo, A.; Manna, N.; Menichelli, D.; Messineo, A.; Piemonte, C.; Pozza, A.; Scaringella, M.; Segneri, G.; Sentenac, D.; Zorzi, N.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 570:2(2007), pp. 330-335. [10.1016/j.nima.2006.09.034]

Study of radiation damage induced by 24 GeV/c and 26 MeV protons on heavily irradiated MCz and FZ silicon detectors

CREANZA, Donato Maria;
2007-01-01

Abstract

The aim of this work is the development of radiation hard detectors for very high luminosity colliders. A growing interest has been recently focused on Czochralski silicon as a potentially radiation-hard material. We report on the processing and characterization of micro-strip sensors and pad detectors produced by ITC-IRST on n- and p-type magnetic Czochralski and float zone silicon. Part of the samples has been irradiated using 24 GeV/c protons (CERN-Geneva), while another part has been irradiated with 26 MeV protons (FZK-Karisruhe) up to a fluence of 5 x 10(15) 1 MeV-neutron-equivalent/cmz. All the samples have been completely characterized before and after irradiation. Their radiation hardness as a function of the irradiation fluence has been established in terms of breakdown voltage, leakage current and evaluating the more relevant mini-sensor parameter variation. Moreover, the time evolution of depletion voltage, leakage current and inter-strip capacitance has been monitored in order to study their annealing behavior and space charge sign inversion effects. (c) 2006 Elsevier B.V. All rights reserved.
2007
Study of radiation damage induced by 24 GeV/c and 26 MeV protons on heavily irradiated MCz and FZ silicon detectors / Radicci, V.; Borrello, L.; Boscardin, M.; Bruzzi, M.; Creanza, Donato Maria; Dalla Betta, G. F.; de Palma, M.; Focardi, E.; Macchiolo, A.; Manna, N.; Menichelli, D.; Messineo, A.; Piemonte, C.; Pozza, A.; Scaringella, M.; Segneri, G.; Sentenac, D.; Zorzi, N.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 570:2(2007), pp. 330-335. [10.1016/j.nima.2006.09.034]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/7262
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