Deep sub-micron CMOS technologies are characterized by a sensible dispersion in the circuit performances due to the technology process fluctuations. Circuit designers are thus faced with an increasing need for accurate statistical analyses to guarantee the correct circuit operation against these effects. Here we present a technique for a simple and “realistic” estimation of the performance limits of CMOS IC’s which preserves correlation between model parameters and gives more realistic results as compared with existing and commonly used worst case approaches. Moreover a comparative analysis between different worst case techniques has been performed with reference to a few widely used basic circuit structures.

An Approach to the Statistical Analysis of CMOS Integrated Circuits / Matarrese, G.; Marzocca, C.; Corsi, F.. - In: ALTA FREQUENZA - RIVISTA DI ELETTRONICA. - ISSN 1120-1908. - STAMPA. - 13:5(2001), pp. 51-55.

An Approach to the Statistical Analysis of CMOS Integrated Circuits

Matarrese, G.;Marzocca, C.;Corsi, F.
2001-01-01

Abstract

Deep sub-micron CMOS technologies are characterized by a sensible dispersion in the circuit performances due to the technology process fluctuations. Circuit designers are thus faced with an increasing need for accurate statistical analyses to guarantee the correct circuit operation against these effects. Here we present a technique for a simple and “realistic” estimation of the performance limits of CMOS IC’s which preserves correlation between model parameters and gives more realistic results as compared with existing and commonly used worst case approaches. Moreover a comparative analysis between different worst case techniques has been performed with reference to a few widely used basic circuit structures.
2001
An Approach to the Statistical Analysis of CMOS Integrated Circuits / Matarrese, G.; Marzocca, C.; Corsi, F.. - In: ALTA FREQUENZA - RIVISTA DI ELETTRONICA. - ISSN 1120-1908. - STAMPA. - 13:5(2001), pp. 51-55.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/7947
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