The aim of this paper is to present a comparison of electro-thermal performance of two HBTs based on Si/SiGe and on AlGaAs/GaAs, by means of an analytical electro-thermal model, already proposed by us, able to calculate the temperature and current distribution for any integrated device, whose structure can be represented as an arbitrary number of superimposed layers with a 2-D embedded thermal source
COMPARISON OF ELECTRO-THERMAL PERFORMANCE OF HETEROJUNCTION BIPOLAR TRANSISTORS BASED ON Si/SiGe AND AlGaAs/GaAs / Marani, R.; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF RESEARCH AND REVIEWS IN APPLIED SCIENCES. - ISSN 2076-734X. - 12:2(2012), pp. 164-172.
COMPARISON OF ELECTRO-THERMAL PERFORMANCE OF HETEROJUNCTION BIPOLAR TRANSISTORS BASED ON Si/SiGe AND AlGaAs/GaAs
PERRI, Anna Gina
2012-01-01
Abstract
The aim of this paper is to present a comparison of electro-thermal performance of two HBTs based on Si/SiGe and on AlGaAs/GaAs, by means of an analytical electro-thermal model, already proposed by us, able to calculate the temperature and current distribution for any integrated device, whose structure can be represented as an arbitrary number of superimposed layers with a 2-D embedded thermal sourceI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.