The aim of this paper is to present a comparison of electro-thermal performance of two HBTs based on Si/SiGe and on AlGaAs/GaAs, by means of an analytical electro-thermal model, already proposed by us, able to calculate the temperature and current distribution for any integrated device, whose structure can be represented as an arbitrary number of superimposed layers with a 2-D embedded thermal source

COMPARISON OF ELECTRO-THERMAL PERFORMANCE OF HETEROJUNCTION BIPOLAR TRANSISTORS BASED ON Si/SiGe AND AlGaAs/GaAs / Marani, R.; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF RESEARCH AND REVIEWS IN APPLIED SCIENCES. - ISSN 2076-734X. - 12:2(2012), pp. 164-172.

COMPARISON OF ELECTRO-THERMAL PERFORMANCE OF HETEROJUNCTION BIPOLAR TRANSISTORS BASED ON Si/SiGe AND AlGaAs/GaAs

PERRI, Anna Gina
2012-01-01

Abstract

The aim of this paper is to present a comparison of electro-thermal performance of two HBTs based on Si/SiGe and on AlGaAs/GaAs, by means of an analytical electro-thermal model, already proposed by us, able to calculate the temperature and current distribution for any integrated device, whose structure can be represented as an arbitrary number of superimposed layers with a 2-D embedded thermal source
2012
COMPARISON OF ELECTRO-THERMAL PERFORMANCE OF HETEROJUNCTION BIPOLAR TRANSISTORS BASED ON Si/SiGe AND AlGaAs/GaAs / Marani, R.; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF RESEARCH AND REVIEWS IN APPLIED SCIENCES. - ISSN 2076-734X. - 12:2(2012), pp. 164-172.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/9872
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