Simulation of CNTFET Digital Circuits: a VERILOG-A Implementation

A Verilog-A compact model for Carbon NanoTube Field Effect Transistors (CNTFETs) has been implemented to study basic digital circuits. The model, based on the hypothesis of fully ballistic transport in a mesoscopic system between two non-reflective contacts, has been structured to allow an easy implementation in Verilog-A language and has been compared with experimental data, showing a good agreement between simulation and experimental results, particularly in the saturation region, where the relative error is practically negligible. Moreover the Verilog-A model has been utilized to design a digital NOT gate with complementary technology and a NAND gate, in which the quantum capacitance dependence on polarization voltages has been considered.