Silica, ITO, chalcogenide glass films and multilayers were deposited by excimer laser ablation deposition. Investigations show that good quality stoichiometric silica films can be deposited on substrates at room temperature by ArF laser ablation of SiO in O2 atmosphere. Surface roughness can be kept low (approximately 5 nm). Low- absorbance and low resistivity (1.6x10-6 (Omega) m, the lowest value in literature) ITO films were grown with XeCl laser pulses on substrates heated at 200 degree(s)C. Optical switches were realized with ultra-thin (6-9 nm) ITO films. Rare-earth-doped waveguides were efficiently deposited by ablating Pr3+ -doped chalcogenide glass (70%GeS2-15%Ga2S3-15%CsI-2000 ppm Pr3+) targets in vacuum (1x10-5Pa by XeCl laser pulses.
Pulsed laser deposition of films and multilayers for optoelectronic applications / Caricato, A. P.; Fernández, M.; Leggieri, G.; Luches, A.; Martino, M.; Prudenzano, F.. - STAMPA. - 4762:(2002), pp. 41-51. (Intervento presentato al convegno 9th International Conference on Advanced Laser Technologies (ALT 01) tenutosi a Constanta, Romania nel September 11-14, 2001) [10.1117/12.478662].
Pulsed laser deposition of films and multilayers for optoelectronic applications
Prudenzano, F.
2002-01-01
Abstract
Silica, ITO, chalcogenide glass films and multilayers were deposited by excimer laser ablation deposition. Investigations show that good quality stoichiometric silica films can be deposited on substrates at room temperature by ArF laser ablation of SiO in O2 atmosphere. Surface roughness can be kept low (approximately 5 nm). Low- absorbance and low resistivity (1.6x10-6 (Omega) m, the lowest value in literature) ITO films were grown with XeCl laser pulses on substrates heated at 200 degree(s)C. Optical switches were realized with ultra-thin (6-9 nm) ITO films. Rare-earth-doped waveguides were efficiently deposited by ablating Pr3+ -doped chalcogenide glass (70%GeS2-15%Ga2S3-15%CsI-2000 ppm Pr3+) targets in vacuum (1x10-5Pa by XeCl laser pulses.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
