We have determined the shear stress associated with the temperature gradient in quantum cascade lasers operated in continuous-wave mode. This information was obtained as a function of the electrical power using a combination of microprobe photoluminescence and anti-Stokes/Stokes Raman measurements in ridge-waveguide GaAs structures mounted epilayer down to the heat sink. At electrical power densities in the order of similar to5 kW/cm(2), the strain in the cladding layers at the edges of the laser ridges reaches the critical value for the creation of misfit dislocations. Above 10-12 kW/cm(2), extended defect formation and eventual device failure are observed.
Thermoelastic stress in GaAs/AlGaAs quantum cascade lasers / Spagnolo, V.; Scamarcio, G.; Marano, D.; Page, H.; Sirtori, C.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 82:26(2003), pp. 4639-4641. [10.1063/1.1586998]
Thermoelastic stress in GaAs/AlGaAs quantum cascade lasers
Spagnolo, V.;
2003-01-01
Abstract
We have determined the shear stress associated with the temperature gradient in quantum cascade lasers operated in continuous-wave mode. This information was obtained as a function of the electrical power using a combination of microprobe photoluminescence and anti-Stokes/Stokes Raman measurements in ridge-waveguide GaAs structures mounted epilayer down to the heat sink. At electrical power densities in the order of similar to5 kW/cm(2), the strain in the cladding layers at the edges of the laser ridges reaches the critical value for the creation of misfit dislocations. Above 10-12 kW/cm(2), extended defect formation and eventual device failure are observed.| File | Dimensione | Formato | |
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