We report on the determination of thermal resistance, facet temperature profile, and heat flux of GaAs/Al0.33Ga0.67As quantum-cascade lasers operating in pulsed mode, using a microprobe band-to-band photoluminescence technique. The thermal resistance of epilayer-side mounted lasers is similar to 30% smaller than that of substrate-side mounted ones. The dependence of the thermal resistance on the injection conditions and its correlation with the output power is also reported.
Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers / Spagnolo, V.; Troccoli, M.; Scamarcio, G.; Becker, C.; Glastre, G.; Sirtori, C.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 78:9(2001), pp. 1177-1179. [10.1063/1.1351850]
Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers
Spagnolo, V.;
2001-01-01
Abstract
We report on the determination of thermal resistance, facet temperature profile, and heat flux of GaAs/Al0.33Ga0.67As quantum-cascade lasers operating in pulsed mode, using a microprobe band-to-band photoluminescence technique. The thermal resistance of epilayer-side mounted lasers is similar to 30% smaller than that of substrate-side mounted ones. The dependence of the thermal resistance on the injection conditions and its correlation with the output power is also reported.| File | Dimensione | Formato | |
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