An equivalent circuit of two GaAs MESFETs has been determined with the aid of a computer by minimizing an objective function depending upon the differences between calculated and measured s parameters, by means of Jones' subroutine. The choice of the initial values of the scattering parameter, obtained from the equivalent circuit of the devices considered as unilateral ones, has been a very important step.
Equivalent Circuits of Gallium Arsenide Unipolar Transistors / Andresciani, V.; Perri, A. G.. - In: ALTA FREQUENZA. - ISSN 0002-6557. - STAMPA. - 48:1(1979), pp. 16-19.
Equivalent Circuits of Gallium Arsenide Unipolar Transistors
Perri, A. G.
1979-01-01
Abstract
An equivalent circuit of two GaAs MESFETs has been determined with the aid of a computer by minimizing an objective function depending upon the differences between calculated and measured s parameters, by means of Jones' subroutine. The choice of the initial values of the scattering parameter, obtained from the equivalent circuit of the devices considered as unilateral ones, has been a very important step.File in questo prodotto:
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