In this paper a generalized procedure to extract the noise parameters of GaAs MESFETs is presented. The average quadratic error between the measured values of optimum noise figure and the calculated ones is minimized in order to obtain the optimum admittance value at the amplifier input. The hypothesis of device unilaterality is assumed. A comparison between the proposed method and the previous ones has been carried out. A consequent more simplified analytical approach to evaluate the optimum noise source impedance of a GaAs MESFET amplifier allows the proposed procedure to be easly implemented in the most popular CAD tools.
|Titolo:||A new general procedure to extract the noise parameters of microwave GaAs MESFETs|
|Data di pubblicazione:||1991|
|Digital Object Identifier (DOI):||10.1002/ett.4460020511|
|Appare nelle tipologie:||1.1 Articolo in rivista|