A Simulation Study of Basic Digital Circuits using Molecular Diodes

In this paper we illustrate a new kind of devices (molecular devices), able to work better at nanometer scale, with particular attention to molecular diodes. In particular we simulate the I-V characteristics of a gated molecular diode, showing how an increase of the gate voltage involves an increase of the drain current: Then we propose a simulation study, obtained by SPICE simulator, in order to analyze and design some basic digital circuits (AND &OR) employing molecular diodes. In the light of obtained results, we demonstrate that molecular diodes as logic ports cannot be used because, although they follow input pulses, the logic levels in output and the noise margin obtained are not appropriate for electronic applications.