Variation of I-V characteristics due to process parameters as base for modelling the component variability for LDD MOSFET devices

In this paper we present the effect of process parameters variations on I-V characteristics of LDD MOSFETs through a simulation study, applying also to any submicron device. In particular we examine the effect of variation of ionic implantation for different channel doping involved in MOSFET production. At last we examine a linear I-V model to simulate more adequately the effects of variation of the process parameters as correction to the base model.