The density of states in the mobility gap of amorphous silicon films has been determined by means of field-effect measurements. The samples were deposited by laser-induced chemical-vapor deposition. The analytical determination of the density-of-states distribution is based on the analytical solution of the Fredholm equation of the first kind relating the induced space-charge density and the density of states.
|Titolo:||ANALYTICAL DETERMINATION OF THE DENSITY-OF-GAP-STATES DISTRIBUTION IN AMORPHOUS-SEMICONDUCTORS - EXPERIMENTAL RESULTS|
|Data di pubblicazione:||1987|
|Digital Object Identifier (DOI):||10.1103/PhysRevB.35.614|
|Appare nelle tipologie:||1.1 Articolo in rivista|