The density of states in the mobility gap of amorphous silicon films has been determined by means of field-effect measurements. The samples were deposited by laser-induced chemical-vapor deposition. The analytical determination of the density-of-states distribution is based on the analytical solution of the Fredholm equation of the first kind relating the induced space-charge density and the density of states.
Analytical determination of the density-of-gap-states distribution in amorphous semiconductors: Experimental results / Augelli, V.; Berardi, V.; Murri, R.; Schiavulli, L.; Leo, M.; Leo, R. A.; Soliani, G.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 35:2(1987), pp. 614-618. [10.1103/PhysRevB.35.614]
Analytical determination of the density-of-gap-states distribution in amorphous semiconductors: Experimental results
V. Berardi;
1987-01-01
Abstract
The density of states in the mobility gap of amorphous silicon films has been determined by means of field-effect measurements. The samples were deposited by laser-induced chemical-vapor deposition. The analytical determination of the density-of-states distribution is based on the analytical solution of the Fredholm equation of the first kind relating the induced space-charge density and the density of states.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
