The aim of this review paper is to define the role of SiGe HBTs within the Technology Revolution that will lead to a globally interconnected smart world. At first we present the recent developments of SiGe BiCMOS technologies and their applications to unit circuit blocks and integrated solutions. Then modern HBT device structures, technological aspects, scaling strategies, design issues and future directions are also discussed. TCAD-based simulations predict that SiGe HBTs with cut-off and maximum oscillation frequencies of 780 GHz and 2 THz respectively will become feasible by the year 2030.
Silicon-Germanium HBT Technology and Applications: A review / Marani, Roberto; Perri, Anna Gina. - In: I-MANAGER'S JOURNAL ON ELECTRONICS ENGINEERING. - ISSN 2229-7286. - STAMPA. - 8:1(2017), pp. 35-52. [10.26634/jele.8.1.13837]
Silicon-Germanium HBT Technology and Applications: A review
Roberto Marani;Anna Gina Perri
2017-01-01
Abstract
The aim of this review paper is to define the role of SiGe HBTs within the Technology Revolution that will lead to a globally interconnected smart world. At first we present the recent developments of SiGe BiCMOS technologies and their applications to unit circuit blocks and integrated solutions. Then modern HBT device structures, technological aspects, scaling strategies, design issues and future directions are also discussed. TCAD-based simulations predict that SiGe HBTs with cut-off and maximum oscillation frequencies of 780 GHz and 2 THz respectively will become feasible by the year 2030.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
