In recent years, Silicon Photomultipliers (SiPMs) have proven to be very performing devices, especially for those applications where high sensitivity to low intensity light and fast responses are required. A SiPM consists of a system of hundreds or even thousands of p-n junctions connected in parallel and operating in Geiger mode. We performed a modeling of the Near Ultraviolet High Density (NUV-HD) devices produced by Fondazione Bruno Kessler (FBK), trying to infer on the cell capacitance, quenching resistance and parasitic capacitances values. We measured the I-V and C-V responses and carefully studied waveforms acquired from sensors conditioned by a simple trans-impedance amplifier, thus obtaining information on the microscopic characteristic of the device. Results regarding the modeling as a function of the overvoltage will be presented and compared with simulations.
Modeling of New High Density NUV Sensitive Silicon Photomultiplier / Bissaldi, E.; Di Venere, L.; Giordano, F.; Simone, D.. - In: NUCLEAR AND PARTICLE PHYSICS PROCEEDINGS. - ISSN 2405-6014. - STAMPA. - 291-293:(2017), pp. 52-54. [10.1016/j.nuclphysbps.2017.06.012]
Modeling of New High Density NUV Sensitive Silicon Photomultiplier
Bissaldi, E.;
2017
Abstract
In recent years, Silicon Photomultipliers (SiPMs) have proven to be very performing devices, especially for those applications where high sensitivity to low intensity light and fast responses are required. A SiPM consists of a system of hundreds or even thousands of p-n junctions connected in parallel and operating in Geiger mode. We performed a modeling of the Near Ultraviolet High Density (NUV-HD) devices produced by Fondazione Bruno Kessler (FBK), trying to infer on the cell capacitance, quenching resistance and parasitic capacitances values. We measured the I-V and C-V responses and carefully studied waveforms acquired from sensors conditioned by a simple trans-impedance amplifier, thus obtaining information on the microscopic characteristic of the device. Results regarding the modeling as a function of the overvoltage will be presented and compared with simulations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
