In recent years, Silicon Photomultipliers (SiPMs) have proven to be very performing devices, especially for those applications where high sensitivity to low intensity light and fast responses are required. A SiPM consists of a system of hundreds or even thousands of p-n junctions connected in parallel and operating in Geiger mode. We performed a modeling of the Near Ultraviolet High Density (NUV-HD) devices produced by Fondazione Bruno Kessler (FBK), trying to infer on the cell capacitance, quenching resistance and parasitic capacitances values. We measured the I-V and C-V responses and carefully studied waveforms acquired from sensors conditioned by a simple trans-impedance amplifier, thus obtaining information on the microscopic characteristic of the device. Results regarding the modeling as a function of the overvoltage will be presented and compared with simulations.
Modeling of New High Density NUV Sensitive Silicon Photomultiplier / Bissaldi, E.; Di Venere, L.; Giordano, F.; Simone, D.. - In: NUCLEAR AND PARTICLE PHYSICS PROCEEDINGS. - ISSN 2405-6014. - STAMPA. - 291-293:(2017), pp. 52-54. [10.1016/j.nuclphysbps.2017.06.012]
Modeling of New High Density NUV Sensitive Silicon Photomultiplier
Bissaldi, E.;
2017-01-01
Abstract
In recent years, Silicon Photomultipliers (SiPMs) have proven to be very performing devices, especially for those applications where high sensitivity to low intensity light and fast responses are required. A SiPM consists of a system of hundreds or even thousands of p-n junctions connected in parallel and operating in Geiger mode. We performed a modeling of the Near Ultraviolet High Density (NUV-HD) devices produced by Fondazione Bruno Kessler (FBK), trying to infer on the cell capacitance, quenching resistance and parasitic capacitances values. We measured the I-V and C-V responses and carefully studied waveforms acquired from sensors conditioned by a simple trans-impedance amplifier, thus obtaining information on the microscopic characteristic of the device. Results regarding the modeling as a function of the overvoltage will be presented and compared with simulations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
