An intersecting waveguide modulator which utilizes the carrier injection effects is presented and characterized. Using O+ implantation to render the implanted region electrically inactive, a well confined injection carrier channel is formed. This area can be driven to function as waveguide or as antiwaveguide. A transversal electrode switches the modulator from the on-state to the off-state or vice versa. At the base of carrier induced refractive index modeling and the finite difference beam propagation method, an optimum design modeling is given out to optimize the switch performance and to obtain the smallest injection current of this modulator.
Optimum design of GaAs waveguides intersecting modulator / Xu, Zhene; Rizzi, Maria; Castagnolo, Beniamino (PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING). - In: Miniaturized Systems with Micro-Optics and Micromechanics III / [a cura di] M. Edward Motamedi, Rolf Goering. - STAMPA. - Bellingham, WA : SPIE, 1998. - ISBN 0-8194-2715-2. - pp. 147-155 [10.1117/12.302391]
Optimum design of GaAs waveguides intersecting modulator
Maria Rizzi;Beniamino Castagnolo
1998-01-01
Abstract
An intersecting waveguide modulator which utilizes the carrier injection effects is presented and characterized. Using O+ implantation to render the implanted region electrically inactive, a well confined injection carrier channel is formed. This area can be driven to function as waveguide or as antiwaveguide. A transversal electrode switches the modulator from the on-state to the off-state or vice versa. At the base of carrier induced refractive index modeling and the finite difference beam propagation method, an optimum design modeling is given out to optimize the switch performance and to obtain the smallest injection current of this modulator.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
