An intersecting waveguide modulator which utilizes the carrier injection effects is presented and characterized. Using O+ implantation to render the implanted region electrically inactive, a well confined injection carrier channel is formed. This area can be driven to function as waveguide or as antiwaveguide. A transversal electrode switches the modulator from the on-state to the off-state or vice versa. At the base of carrier induced refractive index modeling and the finite difference beam propagation method, an optimum design modeling is given out to optimize the switch performance and to obtain the smallest injection current of this modulator.

Optimum design of GaAs waveguides intersecting modulator

Maria Rizzi;Beniamino Castagnolo
1998-01-01

Abstract

An intersecting waveguide modulator which utilizes the carrier injection effects is presented and characterized. Using O+ implantation to render the implanted region electrically inactive, a well confined injection carrier channel is formed. This area can be driven to function as waveguide or as antiwaveguide. A transversal electrode switches the modulator from the on-state to the off-state or vice versa. At the base of carrier induced refractive index modeling and the finite difference beam propagation method, an optimum design modeling is given out to optimize the switch performance and to obtain the smallest injection current of this modulator.
1998
Miniaturized Systems with Micro-Optics and Micromechanics III
0-8194-2715-2
SPIE
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/13224
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