An intersecting waveguide modulator which utilizes the carrier injection effects is presented and characterized. Using O+ implantation to render the implanted region electrically inactive, a well confined injection carrier channel is formed. This area can be driven to function as waveguide or as anti-waveguide. A transversal electrode switches the modulator from the on-state to the off-state or vice versa. By the use of carrier induced refractive index modeling and the finite difference beam propagation method simulation, good performance and small injection current of this modulator are predicted.
New intensity GaAs electro-optic modulator realized by intersecting waveguides / Castagnolo, Beniamino; Rizzi, Maria; Xu, Zhene (PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING). - In: Miniaturized Systems with Micro-Optics and Micromechanics III / [a cura di] M. Edward Motamedi, Larry J. Hornbeck, Kristofer S. J. Pister. - STAMPA. - Bellingham, WA : SPIE, 1997. - ISBN 0-8194-2419-6. - pp. 329-337 [10.1117/12.271431]
New intensity GaAs electro-optic modulator realized by intersecting waveguides
Beniamino Castagnolo;Maria Rizzi;
1997-01-01
Abstract
An intersecting waveguide modulator which utilizes the carrier injection effects is presented and characterized. Using O+ implantation to render the implanted region electrically inactive, a well confined injection carrier channel is formed. This area can be driven to function as waveguide or as anti-waveguide. A transversal electrode switches the modulator from the on-state to the off-state or vice versa. By the use of carrier induced refractive index modeling and the finite difference beam propagation method simulation, good performance and small injection current of this modulator are predicted.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
