A statistical methodology is presented for the extraction of equivalent circuit parameters (ECP's) of high electron mobility transistors (HEMT). This methodology, based upon the Principal Component Analysis (PCA) combined with the Monte Carlo method, can be successfully employed for evaluating HEMT's reliability and their technological dispersion effects, too. Furthermore the method provides an efficient system to derive ECP's values when the measured ones are not available. Thanks to this procedure the device designer can gain a noticeable rid during the design.
HEMT Statistical Modeling using Monte Carlo Method Combined with Principal Components Analysis / Ciminelli, C.; D'Orazio, A.; De Sario, M.; Petruzzelli, V.; Prudenzano, F.. - STAMPA. - (2000), pp. 806-809. (Intervento presentato al convegno 10th Mediterranean Electrotechnical Conference, MELECON 2000 tenutosi a Lemesos, Cyprus nel May 29-31, 2000) [10.1109/MELCON.2000.880056].
HEMT Statistical Modeling using Monte Carlo Method Combined with Principal Components Analysis
C. Ciminelli;A. D'Orazio;M. De Sario;V. Petruzzelli;F. Prudenzano
2000-01-01
Abstract
A statistical methodology is presented for the extraction of equivalent circuit parameters (ECP's) of high electron mobility transistors (HEMT). This methodology, based upon the Principal Component Analysis (PCA) combined with the Monte Carlo method, can be successfully employed for evaluating HEMT's reliability and their technological dispersion effects, too. Furthermore the method provides an efficient system to derive ECP's values when the measured ones are not available. Thanks to this procedure the device designer can gain a noticeable rid during the design.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
