Raman gain, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect are investigated theoretically in silicon-on-insulator waveguides. The influence of the rib waveguide sizes on the time-space evolution of the pump pulse and Stokes wave is presented. Finally, the application of the nonlinear effects in silicon to realise an all-optical switch is proposed.
Modeling and design of an all-optical switch based on Raman effect in optimized silicon-on-insulator waveguides
PASSARO, Vittorio;DE LEONARDIS, Francesco
2005-01-01
Abstract
Raman gain, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect are investigated theoretically in silicon-on-insulator waveguides. The influence of the rib waveguide sizes on the time-space evolution of the pump pulse and Stokes wave is presented. Finally, the application of the nonlinear effects in silicon to realise an all-optical switch is proposed.File in questo prodotto:
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