Raman gain, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect are investigated theoretically in silicon-on-insulator waveguides. The influence of the rib waveguide sizes on the time-space evolution of the pump pulse and Stokes wave is presented. Finally, the application of the nonlinear effects in silicon to realise an all-optical switch is proposed.

Modeling and design of an all-optical switch based on Raman effect in optimized silicon-on-insulator waveguides

PASSARO, Vittorio;DE LEONARDIS, Francesco
2005

Abstract

Raman gain, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect are investigated theoretically in silicon-on-insulator waveguides. The influence of the rib waveguide sizes on the time-space evolution of the pump pulse and Stokes wave is presented. Finally, the application of the nonlinear effects in silicon to realise an all-optical switch is proposed.
4th Workshop on Fibres and Optical Passive Components , WFOPC2005
0-7803-8949-2
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11589/14353
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