Raman gain, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect are investigated theoretically in silicon-on-insulator waveguides. The influence of the rib waveguide sizes on the time-space evolution of the pump pulse and Stokes wave is presented. Finally, the application of the nonlinear effects in silicon to realise an all-optical switch is proposed.
Modeling and design of an all-optical switch based on Raman effect in optimized silicon-on-insulator waveguides / Passaro, Vittorio; DE LEONARDIS, Francesco. - (2005), pp. 281-286. (Intervento presentato al convegno 4th Workshop on Fibres and Optical Passive Components , WFOPC2005 tenutosi a Mondello, Palermo; Italy nel June 22-24, 2005) [10.1109/WFOPC.2005.1462140].
Modeling and design of an all-optical switch based on Raman effect in optimized silicon-on-insulator waveguides
PASSARO, Vittorio;DE LEONARDIS, Francesco
2005-01-01
Abstract
Raman gain, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect are investigated theoretically in silicon-on-insulator waveguides. The influence of the rib waveguide sizes on the time-space evolution of the pump pulse and Stokes wave is presented. Finally, the application of the nonlinear effects in silicon to realise an all-optical switch is proposed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
