A detailed modeling of semiconductor ring lasers is briefly reviewed and applied to the investigation of bidirectional regime. By a powerful model, a novel stability criterion has been derived to find the bidirectional regime of any semiconductor ring lasers, depending on the backscattering and any linear and non-linear effect in the active region.
Modeling of bidirectional regime in semiconductor ring lasers / Passaro, V. M. N.; De Leonardis, F.. - STAMPA. - (2005), pp. 115-116. (Intervento presentato al convegno 5th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD’05 tenutosi a Berlin, Germany nel September 19-22, 2005) [10.1109/NUSOD.2005.1518162].
Modeling of bidirectional regime in semiconductor ring lasers
V. M. N. Passaro;F. De Leonardis
2005-01-01
Abstract
A detailed modeling of semiconductor ring lasers is briefly reviewed and applied to the investigation of bidirectional regime. By a powerful model, a novel stability criterion has been derived to find the bidirectional regime of any semiconductor ring lasers, depending on the backscattering and any linear and non-linear effect in the active region.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
