A detailed modeling of semiconductor ring lasers is briefly reviewed and applied to the investigation of bidirectional regime. By a powerful model, a novel stability criterion has been derived to find the bidirectional regime of any semiconductor ring lasers, depending on the backscattering and any linear and non-linear effect in the active region.
Modeling of bidirectional regime in semiconductor ring lasers
V. M. N. Passaro;F. De Leonardis
2005-01-01
Abstract
A detailed modeling of semiconductor ring lasers is briefly reviewed and applied to the investigation of bidirectional regime. By a powerful model, a novel stability criterion has been derived to find the bidirectional regime of any semiconductor ring lasers, depending on the backscattering and any linear and non-linear effect in the active region.File in questo prodotto:
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