A detailed modeling of semiconductor ring lasers is briefly reviewed and applied to the investigation of bidirectional regime. By a powerful model, a novel stability criterion has been derived to find the bidirectional regime of any semiconductor ring lasers, depending on the backscattering and any linear and non-linear effect in the active region.

Modeling of bidirectional regime in semiconductor ring lasers

V. M. N. Passaro;F. De Leonardis
2005-01-01

Abstract

A detailed modeling of semiconductor ring lasers is briefly reviewed and applied to the investigation of bidirectional regime. By a powerful model, a novel stability criterion has been derived to find the bidirectional regime of any semiconductor ring lasers, depending on the backscattering and any linear and non-linear effect in the active region.
2005
5th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD’05
0-7803-9149-7
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/14354
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