In this paper a 3D FEM model is used to simulate the temperature behaviour of X-ray GaAs and CdTe p-i-n detectors. The good accordance of the obtained values with the know experimental data confirms the general validity of the adopted model in simulating devices of any material, at any working temperature. Moreover the comparison shows that GaAs detectors having the same dimension than CdTe detectors and for the same energy source (241Am with 60KeV) exhibit the same efficiency at 243°K while, at room temperature (300°K) their behaviour is far better
Comparison of X-Ray GaAs and CdTe P-I-N Detectors by a 3D FEM Model
M. Rizzi;B. Castagnolo
2005-01-01
Abstract
In this paper a 3D FEM model is used to simulate the temperature behaviour of X-ray GaAs and CdTe p-i-n detectors. The good accordance of the obtained values with the know experimental data confirms the general validity of the adopted model in simulating devices of any material, at any working temperature. Moreover the comparison shows that GaAs detectors having the same dimension than CdTe detectors and for the same energy source (241Am with 60KeV) exhibit the same efficiency at 243°K while, at room temperature (300°K) their behaviour is far betterFile in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
