The recent progress in the theoretical/numerical studies of cavity solitons in semiconductor microresonators, following the development of more refined models to adequately describe the complex physics of broad-area semiconductor microresonators, is presented. In particular, a microscopic model is discussed to describe the nonlinear response of a multiple quantum well sample, including the most relevant many-body effects in the framework of the Pade approximation. Both the passive and the active configurations are considered. In the latter case, a population inversion in the medium is sustained by means of carrier injection, in such a way that the device is maintained below the lasing threshold.
First principle theory for cavity solitons in semiconductor microresonators / Brambilla, M.; Maggipinto, T.; Rizzi, F.; Spinelli, L.; Tissoni, G.; Lugiato, L. A.. - STAMPA. - (2000), pp. 20-26. (Intervento presentato al convegno International Quantum Electronics Conference, IQEC 2000 tenutosi a Nice, France nel September 10-15, 2000) [10.1109/IQEC.2000.907781].
First principle theory for cavity solitons in semiconductor microresonators
M. Brambilla;
2000
Abstract
The recent progress in the theoretical/numerical studies of cavity solitons in semiconductor microresonators, following the development of more refined models to adequately describe the complex physics of broad-area semiconductor microresonators, is presented. In particular, a microscopic model is discussed to describe the nonlinear response of a multiple quantum well sample, including the most relevant many-body effects in the framework of the Pade approximation. Both the passive and the active configurations are considered. In the latter case, a population inversion in the medium is sustained by means of carrier injection, in such a way that the device is maintained below the lasing threshold.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
