The recent progress in the theoretical/numerical studies of cavity solitons in semiconductor microresonators, following the development of more refined models to adequately describe the complex physics of broad-area semiconductor microresonators, is presented. In particular, a microscopic model is discussed to describe the nonlinear response of a multiple quantum well sample, including the most relevant many-body effects in the framework of the Pade approximation. Both the passive and the active configurations are considered. In the latter case, a population inversion in the medium is sustained by means of carrier injection, in such a way that the device is maintained below the lasing threshold.

First principle theory for cavity solitons in semiconductor microresonators

M. Brambilla;
2000

Abstract

The recent progress in the theoretical/numerical studies of cavity solitons in semiconductor microresonators, following the development of more refined models to adequately describe the complex physics of broad-area semiconductor microresonators, is presented. In particular, a microscopic model is discussed to describe the nonlinear response of a multiple quantum well sample, including the most relevant many-body effects in the framework of the Pade approximation. Both the passive and the active configurations are considered. In the latter case, a population inversion in the medium is sustained by means of carrier injection, in such a way that the device is maintained below the lasing threshold.
International Quantum Electronics Conference, IQEC 2000
0-7803-6318-3
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11589/15939
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