The recent progress in the theoretical/numerical studies of cavity solitons in semiconductor microresonators, following the development of more refined models to adequately describe the complex physics of broad-area semiconductor microresonators, is presented. In particular, a microscopic model is discussed to describe the nonlinear response of a multiple quantum well sample, including the most relevant many-body effects in the framework of the Pade approximation. Both the passive and the active configurations are considered. In the latter case, a population inversion in the medium is sustained by means of carrier injection, in such a way that the device is maintained below the lasing threshold.
|Titolo:||First principle theory for cavity solitons in semiconductor microresonators|
|Data di pubblicazione:||2000|
|Nome del convegno:||International Quantum Electronics Conference, IQEC 2000|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1109/IQEC.2000.907781|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|