In this paper we present the effect of variation of substrate doping concentrations on I-V characteristics of Lightly Doped Drain (LDD) MOSFETs through a simulation study applicable also to any submicron device. The used software is TCAD simulator, which provide general capabilities for numerical, physically-based, two-dimensional simulation of semiconductor processing. At last we examine a linear model, in which we propose an appropriate approximation, that allows to simulate more adequately the effects of variation of the process parameters as correction to the base model of the device.
EFFECT OF SUBSTRATE DOPING CONCENTRATION ON ELECTRICAL CHARACTERISTICS OF LDD MOSFET DEVICES / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF RESEARCH AND REVIEWS IN APPLIED SCIENCES. - ISSN 2076-734X. - ELETTRONICO. - 38:1(2019), pp. 1-7.
EFFECT OF SUBSTRATE DOPING CONCENTRATION ON ELECTRICAL CHARACTERISTICS OF LDD MOSFET DEVICES
Roberto MaraniSoftware
;Anna Gina Perri
Methodology
2019-01-01
Abstract
In this paper we present the effect of variation of substrate doping concentrations on I-V characteristics of Lightly Doped Drain (LDD) MOSFETs through a simulation study applicable also to any submicron device. The used software is TCAD simulator, which provide general capabilities for numerical, physically-based, two-dimensional simulation of semiconductor processing. At last we examine a linear model, in which we propose an appropriate approximation, that allows to simulate more adequately the effects of variation of the process parameters as correction to the base model of the device.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
