This paper presents techniques developed to analyze displacements fields around an edge dislocation via electron microscopy. During the growth process of these SiC wafers mechanical defects can occur resulting in a defective component. Without the advances made in electron microscopy and experimental methods in fringe analysis the study of these types of defects would not be possible. The goal here is then to understand if using a classical differential geometric approach to Continuum Mechanics is good enough to model the events taking place in the small region that is being considered in this study. This is important to know if further development of these materials needs to be carried out. Especially with the development of new semiconductor electronic devices and circuits based on silicon carbide that can function in high-temperature, high-power, and/or high-radiation conditions are being made. These advancements allow for better performance and ultimately more capacity. Here we come full circle with Volterra’s pioneering work by analyzing strain fields in regions where the crystalline structure is distorted.
Attenzione! Scheda prodotto non ancora validata
I metadati della pubblicazione sono in fase di verifica da parte dell'Ateneo
|Titolo:||Experimental Nanomechanics: A look at edge dislocations in 4HsiC crystals|
|Data di pubblicazione:||2007|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|