Pure and oxygenated n-type silicon samples have been characterized by Hall mobility and conductivity measurements as a function of temperature, before and after irradiation. p(+)n silicon diodes have been characterized by C-V and reverse current measurements as a function of temperature. Investigated samples have been grown by FZ technique in Polovodice (Prague) and have been irradiated with protons at CERN facilities (Phi = 4 x 10(12)-10(14) protons/cm(2)). Carrier concentrations have been evaluated by conductivity and Hall mobility measurements. C-V measurements on irradiated diodes (Phi congruent to 10(12) protons/cm(2)) show a decrease of the effective concentration N-eff with respect to unirradiated samples. Reverse current measurements as a function of temperature show that oxygenated diode has a leakage current lower than that of purr diode at temperatures less than 250 K. (C) 1999 Elsevier Science B.V. All rights reserved.
|Titolo:||Electrical characterization of standard and oxygenated irradiated ROSE diodes|
|Data di pubblicazione:||1999|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1016/S0168-9002(98)01474-0|
|Appare nelle tipologie:||1.1 Articolo in rivista|