In this paper we propose a new formula to evaluate in semiconducting Carbon Nanotubes the energy band gap, i.e. the electronic transition energy from the first valence band to the first conduction band, which is fundamental for electronic applications of CNTs as channel in field effect transistors. The proposed formula is based on empirical correction factors, gained by an optimization procedure aimed at matching experimental data, which results in negligible errors. Moreover the proposed formula shows a new dependence on CNT symmetry indices (n-m), which has been never observed in literature.
A Formula to Determine Energy Band Gap in Semiconducting Carbon Nanotubes / Gelao, Gennaro; Marani, Roberto; Perri, Anna Gina. - In: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. - ISSN 2162-8777. - ELETTRONICO. - 8:2(2019), pp. 19-21. [10.1149/2.0201902jss]
A Formula to Determine Energy Band Gap in Semiconducting Carbon Nanotubes
Gennaro GelaoSoftware
;Roberto MaraniValidation
;Anna Gina Perri
Conceptualization
2019-01-01
Abstract
In this paper we propose a new formula to evaluate in semiconducting Carbon Nanotubes the energy band gap, i.e. the electronic transition energy from the first valence band to the first conduction band, which is fundamental for electronic applications of CNTs as channel in field effect transistors. The proposed formula is based on empirical correction factors, gained by an optimization procedure aimed at matching experimental data, which results in negligible errors. Moreover the proposed formula shows a new dependence on CNT symmetry indices (n-m), which has been never observed in literature.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.