Photoconductivity measurements as a function of the temperature and light intensity were carried out on samples of hydrogenated and halogenated silicon films. The samples were deposited by r.f. glow discharge starting from a mixture of silicon tetrachloride and hydrogen. Experimental data were analysed by using a theoretical model which assumes a density of states distribution having two exponential band tails and two gaussian distribution of states in the mobility gap. The model predicts a dependence of the photoconductivity as a function of the light intensity which agrees very well with the experimental one.
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|Titolo:||PHOTOCONDUCTIVITY MEASUREMENTS AS A TOOL FOR THE EVALUATION OF THE DENSITY OF STATES IN AMORPHOUS-SILICON|
|Data di pubblicazione:||1988|
|Digital Object Identifier (DOI):||10.1088/0031-8949/38/2/014|
|Appare nelle tipologie:||1.1 Articolo in rivista|