Photoconductivity measurements as a function of the temperature and light intensity were carried out on samples of hydrogenated and halogenated silicon films. The samples were deposited by r.f. glow discharge starting from a mixture of silicon tetrachloride and hydrogen. Experimental data were analysed by using a theoretical model which assumes a density of states distribution having two exponential band tails and two gaussian distribution of states in the mobility gap. The model predicts a dependence of the photoconductivity as a function of the light intensity which agrees very well with the experimental one
Photoconductivity measurements as a tool for the evaluation of the density of states in amorphous silicon / Augelli, V; Berardi, V; Murri, R; Schiavulli, L. - In: PHYSICA SCRIPTA. - ISSN 0031-8949. - STAMPA. - 38:2(1988), pp. 188-190. [10.1088/0031-8949/38/2/014]
Photoconductivity measurements as a tool for the evaluation of the density of states in amorphous silicon
V Berardi;
1988-01-01
Abstract
Photoconductivity measurements as a function of the temperature and light intensity were carried out on samples of hydrogenated and halogenated silicon films. The samples were deposited by r.f. glow discharge starting from a mixture of silicon tetrachloride and hydrogen. Experimental data were analysed by using a theoretical model which assumes a density of states distribution having two exponential band tails and two gaussian distribution of states in the mobility gap. The model predicts a dependence of the photoconductivity as a function of the light intensity which agrees very well with the experimental oneI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
