We compare the electrical power dependence of the lattice temperature and the electronic temperature of THz quantum cascade lasers (QCLs) operating in the range 2.5- 3.8 THz and based on a resonant-phonon and bound-to-continnum quantum design. This analysis is performed by means of microprobe band-to-band photoluminescence experiments carried out on operating THz QCLs both below and above the lasing threshold. Thermalized non-equilibrium hot-electron distributions are found in both classes of QCLs. While in the case of bound-to-continuum devices a unique value of the electronic temperature is found in the active region minibands, in the case of resonant-phonon devices we found that the upper radiative state, in the lasing range, heats up to similar to 200 K, more than 100 K with respect to the ground state levels. From the measured thermal resistance and the power dependence of the ground state electronic temperature we obtain in the case of resonant-phonon structures a value of the electron-lattice energy relaxation rate comparable with that typical of mid-infrared QCLs, in the case of resonant-phonon structures and a value similar to 50 times higher in bound-to-continuum devices.

Non equilibrium electrons in THz quantum cascade lasers / Serena Vitiello, Miriam; Scamarcio, Gaetano; Spagnolo, Vincenzo. - STAMPA. - 6133:(2006). (Intervento presentato al convegno Conference on Novel In-Plane Semiconductor Lasers V tenutosi a San Jose, CA nel January 23-26, 2006) [10.1117/12.641467].

Non equilibrium electrons in THz quantum cascade lasers

Vincenzo Spagnolo
2006-01-01

Abstract

We compare the electrical power dependence of the lattice temperature and the electronic temperature of THz quantum cascade lasers (QCLs) operating in the range 2.5- 3.8 THz and based on a resonant-phonon and bound-to-continnum quantum design. This analysis is performed by means of microprobe band-to-band photoluminescence experiments carried out on operating THz QCLs both below and above the lasing threshold. Thermalized non-equilibrium hot-electron distributions are found in both classes of QCLs. While in the case of bound-to-continuum devices a unique value of the electronic temperature is found in the active region minibands, in the case of resonant-phonon devices we found that the upper radiative state, in the lasing range, heats up to similar to 200 K, more than 100 K with respect to the ground state levels. From the measured thermal resistance and the power dependence of the ground state electronic temperature we obtain in the case of resonant-phonon structures a value of the electron-lattice energy relaxation rate comparable with that typical of mid-infrared QCLs, in the case of resonant-phonon structures and a value similar to 50 times higher in bound-to-continuum devices.
2006
Conference on Novel In-Plane Semiconductor Lasers V
0-8194-6175-X
Non equilibrium electrons in THz quantum cascade lasers / Serena Vitiello, Miriam; Scamarcio, Gaetano; Spagnolo, Vincenzo. - STAMPA. - 6133:(2006). (Intervento presentato al convegno Conference on Novel In-Plane Semiconductor Lasers V tenutosi a San Jose, CA nel January 23-26, 2006) [10.1117/12.641467].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/16846
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