We report selected results of laboratory measurements and beam tests of heavily irradiated microstrip silicon detectors. The detectors were single-sided devices, produced by different manufacturers and irradiated with different sources, for several total ionizing doses and fluences up to 4 x 10(14) 1-MeV-equivalent neutrons per cm(2). Strip resistance and capacitance, detector leakage currents and breakdown performance were measured before and after irradiations. Signal-to-noise ratio and detector efficiency were studied in beam tests, for different values of the detector temperature and of the read-out pitch, as a function of the detector bias voltage. The goal of these test is to optimise the design of the final prototypes for the Silicon Strip Tracker of the CMS experiment at the CERN LHC collider.
|Titolo:||Test results on heavily irradiated silicon detectors for the CMS experiment at LHC|
|Data di pubblicazione:||2000|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1109/23.903854|
|Appare nelle tipologie:||1.1 Articolo in rivista|